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| H5N5001FM Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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H5N5001FM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1380 (Z)
1st. Edition
Mar. 2001
Features
⢠Low on-resistance : RDS(on) =1.1⦠typ.
⢠Low leakage current : IDSS =1µA max (at VDS = 500 V)
⢠High speed switching : tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
⢠Low gate charge
: Qg = 15nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
⢠Avalanche ratings
Outline
TOâ220FM
D
G
S
123
1. Gate
2. Drain
3. Source
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