H5N3007FN Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N3007FN
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
• Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1
23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel to case thermal impedance
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
G
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^Note1
I_DR
I_{DR (pulse)} ^Note1
I_APNote3
E_ARNote3
θch-c
Pch ^Note2
Tch
Tstg
REJ03G1860-0100
Rev.1.00
Nov 09, 2009
D
1. Gate
2. Drain
3. Source
S
Ratings
300
±30
15
60
15
60
15
13.5
3.57
35
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
°C/W
W
°C
°C
REJ03G1860-0100 Rev.1.00 Nov 09, 2009
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