H5N3007FL-M0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 300V - 15A - MOS FET High Speed Power Switching

H5N3007FL-M0
300V - 15A - MOS FET
High Speed Power Switching
Features
 Low on-resistance
R_DS(on) = 0.12  typ. (at I_D = 7.5 A, V_GS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
 Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel to case thermal impedance
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
G
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^Note1
I_DR
I_{DR (pulse)} ^Note1
I_APNote3
E_ARNote3
ch-c
Pch ^Note2
Tch
Tstg
Preliminary Datasheet
R07DS0995EJ0100
Rev.1.00
Jan 09, 2013
D
1. Gate
2. Drain
3. Source
S
Ratings
300
30
15
60
15
60
15
13.5
3.57
35
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
C/W
W
C
C
R07DS0995EJ0100 Rev.1.00
Jan 09, 2013
Page 1 of 6