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H5N2901FL-M0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 290V - 18A - MOS FET High Speed Power Switching | |||
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H5N2901FL-M0
290V - 18A - MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
RDS(on) = 0.07 ï typ. (at ID = 9 A, VGS = 10 V, Ta = 25ï°C)
ï· Low leakage current
ï· High speed switching
ï· Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. STch = 25ï°C, Tch ï£ 150ï°C
3. Value at Tc = 25ï°C
G
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote2
EARNote2
Pch Note3
ï±ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0996EJ0100
Rev.1.00
Jan 08, 2013
D
1. Gate
2. Drain
3. Source
S
Ratings
290
±30
18
72
18
72
6
2.1
30
4.17
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
R07DS0996EJ0100 Rev.1.00
Jan 08, 2013
Page 1 of 6
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