H5N2801P Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N2801P
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low drive current
• High speed switching
Outline
TO-3P
REJ03G0118-0100Z
Rev.1.00
Oct.01.2003
D
G
S
1
2
3
1. Gate
2. Drain (Flange)
3. Source
Rev.1.00, Oct.01.2003, page 1 of 9