H5N2512FN Datasheet, PDF (1/6 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

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H5N2512FN
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
• Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1
23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
G
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
I_AP ^Note3
Pch ^Note2
θch-c
Tch
Tstg
REJ03G1767-0100
Rev.1.00
Jul 02, 2009
D
1. Gate
2. Drain
3. Source
S
Ratings
250
±30
18
72
18
72
18
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
REJ03G1767-0100 Rev.1.00 Jul 02, 2009
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