H5N2509P Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N2509P
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance: R _{DS (on)} = 0.053 Ω typ.
• Low leakage current: I_DSS = 1 µA max (at V_DS = 250 V, V_GS = 0 V)
• High speed switching: t_f = 110 ns typ (at I_D = 15 A, R_L = 8.3 Ω, V_GS = 10 V)
• Low gate charge: Qg = 110 nC typ (at V_DD = 200 V, V_GS = 10 V, I_D = 30 A)
• Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1
2
3
G
S
REJ03G1109-0200
(Previous: ADE-208-1378)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6