H5N2508DL Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N2508DL, H5N2508DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance: R _{DS (on)} = 0.48 Ω typ.
• Low leakage current: I_DSS = 1 µA max (at V_DS = 250 V)
• High speed switching: t_f = 11 ns typ (at V_GS = 10 V, V_DD = 125 V, I_D = 3.5 A)
• Low gate charge: Qg = 13 nC typ (at V_DD = 200 V, V_GS = 10 V, I_D = 7 A)
• Avalanche ratings
REJ03G1108-0200
(Previous: ADE-208-1377)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7