H5N2507P_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 250V - 50A - MOS FET High Speed Power Switching

H5N2507P
250V - 50A - MOS FET
High Speed Power Switching
Features
 Low on-resistance
R_DS(on) = 0.04  typ. (at I_D = 25 A, V_GS= 10 V, Ta = 25°C)
 Low leakage current
 High speed switching
 Low gate charge
 Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P )
4
1
2
3
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
G
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^Note1
I_DR
I_AP ^Note3
Pch ^Note2
ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0877EJ0200
(Previous: RJJ03G0646-0100)
Rev.2.00
Sep 12, 2012
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
250
±30
50
200
50
35
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0877EJ0200 Rev.2.00
Sep 12, 2012
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