H5N2505DL Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N2505DL, H5N2505DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low drive current
• High speed switching
• Low gate change
• Avalanche ratings
REJ03G1107-0300
Rev.3.00
Oct 16, 2006
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^{Note 1}
I_DR
I_{DR (pulse)} ^{Note 1}
I_AP ^{Note 3}
Pch ^{Note 2}
θ ch-c
Tch
Tstg
Value
250
±30
5
20
5
20
5
25
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
Rev.3.00 Oct 16, 2006 page 1 of 7