H5N2504DL_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N2504DL, H5N2504DS
Silicon N Channel MOS FET
High Speed Power Switching
Preliminary Datasheet
R07DS0399EJ0300
(Previous: REJ03G1106-0200)
Rev.3.00
May 16, 2011
Features
• Low on-resistance
• Low leakage current
• High speed switching
• Low gate charge
• Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (L)-(2) )
(Package name: DPAK (S) )
4
4
D
G
12 ₃
1. Gate
2. Drain
3. Source
4. Drain
12 ₃
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^{Note 1}
I_DR
I_{DR (pulse)} ^{Note 1}
I_AP ^{Note 3}
Pch ^{Note 2}
θ ch-c
Tch
Tstg
Value
250
±20
7
28
7
28
7
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
R07DS0399EJ0300 Rev.3.00
May 16, 2011
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