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| H5N2503P Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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H5N2503P
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance: R DS (on) = 0.04 ⦠typ.
⢠Low leakage current: IDSS = 1 µA max (at VDS = 250 V)
⢠High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)
⢠Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A)
⢠Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1
2
3
G
S
REJ03G1105-0200
(Previous: ADE-208-1374A)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6
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