H5N2501LD Datasheet, PDF (1/5 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N2501LD, H5N2501LS, H5N2501LM
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
REJ03G1250-0200
Rev.2.00
Jul.21,2005
Outline
RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
(Package name LDPAK(L))
(Package name LDPAK(S)-(1))
4
4
RENESAS Package code: PRSS0004AE-C
(Package name LDPAK(S)-(2))
4
1
2
3
H5N2501LD
G
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Avalanche current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
1
2
3
H5N2501LS
D
1. Gate
2. Drain
3. Source
4. Drain
S
1
2
3
H5N2501LM
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_APNote3
Pch ^Note2
Tch
Tstg
Ratings
250
±30
18
72
18
18
75
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C
°C
Rev.2.00, Jul.21.2005, page 1 of 4