|
H5N2007FN Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
|
H5N2007FN
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
⢠Low leakage current
⢠High speed switching
Outline
TO-220FN
D
G
S
REJ03G0370-0100Z
Rev.1.00
May.28.2004
1. Gate
2. Drain
3. Source
1
23
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ⤠10 µs, duty cycle ⤠1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ⤠150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
25
100
25
100
9
5.4
30
4.17
150
â55 to +150
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
(Ta = 25°C)
Unit
Rev.1.00, May.28.2004, page 1 of 7
|
▷ |