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| H5N2004DL Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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H5N2004DL, H5N2004DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance: R DS (on) = 0.38 ⦠typ.
⢠Low leakage current: IDSS = 1 µA max (at VDS = 200 V)
⢠High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)
⢠Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A)
⢠Avalanche ratings
REJ03G1103-0200
(Previous: ADE-208-1372)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7
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