FX6KMJ-06 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX6KMJ-06
High-Speed Switching Use
Pch Power MOS FET
Features
• Drive voltage : 4 V
• V_DSS : – 60 V
• r_{DS(ON) (max)} : 0.21 Ω
• I_D : – 6 A
• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
TO-220FN
3
12 ₃
1
2
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mass
Symbol
V_DSS
V_GSS
I_D
I_DM
I_DA
I_S
I_SM
P_D
Tch
Tstg
Viso
—
Ratings
–60
±20
–6
–24
–6
–6
–24
20
– 55 to +150
– 55 to +150
2000
2.0
REJ03G0261-0100
Rev.1.00
Aug.20.2004
1. Gate
2. Drain
3. Source
(Tc = 25°C)
Unit
Conditions
V
V_GS = 0 V
V
V_DS = 0 V
A
A
A
L = 100 µH
A
A
W
°C
°C
V
AC 1 minute,
Terminal to case
g
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6