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FS5AS-10A Datasheet, PDF (1/7 Pages) Renesas Technology Corp – High-Speed Switching Use Nch Power MOS FET | |||
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FS5AS-10A
High-Speed Switching Use
Nch Power MOS FET
Features
⢠Drive voltage : 10 V
⢠VDSS : 500 V
⢠rDS(ON) (max) : 1.5 â¦
⢠ID : 5 A
Outline
MP-3A
4
12 3
Applications
SMPS, Lamp Ballast, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
â
2, 4
1
3
Ratings
500
±30
5
15
5
65
â 55 to +150
â 55 to +150
0.32
REJ03G0246-0100
Preliminary
Rev.1.00
Aug.20.2004
1. Gate
2. Drain
3. Source
4. Drain
(Tc = 25°C)
Unit
Conditions
V
VGS = 0 V
V
VDS = 0 V
A
A
A
L = 200 µH
W
°C
°C
g
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
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