FS50SM-5A Datasheet, PDF (1/6 Pages) Renesas Technology Corp – High-Speed Switching Use Nch Power MOS FET

FS50SM-5A
High-Speed Switching Use
Nch Power MOS FET
Features
• Drive voltage : 10 V
• V_DSS : 250 V
• r_{DS(ON) (max)} : 0.068 Ω
• I_D : 50 A
Outline
TO-3P
4
1
23
2, 4
1
3
REJ03G0277-0100
Rev.1.00
Aug.20.2004
1. Gate
2. Drain
3. Source
4. Drain
Applications
Switching mode power supply, plasma display TVs, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
V_DSS
V_GSS
I_D
I_DM
P_D
Tch
Tstg
—
Ratings
250
±30
50
150
250
– 55 to +150
– 55 to +150
4.8
(Tc = 25°C)
Unit
Conditions
V
V_GS = 0 V
V
V_DS = 0 V
A
A
W
°C
°C
g
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6