FS30ASJ-06F Datasheet, PDF (1/7 Pages) Renesas Technology Corp – High-Speed Switching Use Nch Power MOS FET

FS30ASJ-06F
High-Speed Switching Use
Nch Power MOS FET
Features
• Drive voltage : 4 V
• V_DSS : 60 V
• r_{DS(ON) (max)} : 22 mΩ
• I_D : 30 A
• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
MP-3A
2, 4
4
1
12 ₃
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
V_DSS
V_GSS
I_D
I_DM
I_DA
I_S
I_SM
P_D
Tch
Tstg
—
Ratings
60
±20
30
120
30
30
120
50
– 55 to +150
– 55 to +150
0.32
REJ03G0242-0100
Rev.1.00
Aug.20.2004
1. Gate
2. Drain
3. Source
4. Drain
(Tc = 25°C)
Unit
Conditions
V
V_GS = 0 V
V
V_DS = 0 V
A
A
A
L = 10 µH
A
A
W
°C
°C
g
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6