CRD5AS-12B_15 Datasheet, PDF (1/6 Pages) Renesas Technology Corp – Reverse Conducting Thyristor Medium Power Use

Preliminary Datasheet
CRD5AS-12B
Reverse Conducting Thyristor
Medium Power Use
R07DS0503EJ0100
Rev.1.00
Jul 07, 2011
Features
 I_{T (AV)} : 5 A
 V_DRM : 600 V
 I_GT: 100 A
 The Product guaranteed maximum junction
temperature 150C
 Built-in reverse conducting diode
 Planar Type
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
4
12 ₃
2, 4
3
1
1. Cathode
2. Anode
3. Gate
4. Anode
Applications
Switching mode power supply, Regulator for motorcycle
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltage ^Note1
V_DRM
Notes: 1. With gate to cathode resistance R_GK=220
Parameter
RMS on-state current
Average on-state current
Symbol
I_T(RMS)
I_T(AV)
Ratings
7.8
5
Surge on-state current
I²t for fusing
I_TSM
90
I²t
33
Surge reverse-conducting current
I_RCSM
3
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
P_GM
P_G(AV)
V_FGM
V_RGM
I_FGM
Tj
Tstg
—
0.5
0.1
6
6
0.3
– 40 to +150
– 40 to +150
0.26
Voltage class
Unit
12
600
V
Unit
Conditions
A
A
Commercial frequency, sine half wave
180 conduction, Tc=113C
A
60Hz sine half wave, 1full cycle,
peak value, non-repetitive
A²s
Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
A
sine half wave, pulse width 10ms
peak value, non-repetitive, R_GK=0
W
W
V
V
A
C
C
g
Typical value
R07DS0503EJ0100 Rev.1.00
Jul 07, 2011
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