CR5AS-8UE_15 Datasheet, PDF (1/3 Pages) Renesas Technology Corp – 400V - 5A - Thyristor Medium Power Use

CR5AS-8UE
400V - 5A - Thyristor
Medium Power Use
Features
• I_{T (AV)} : 5 A
• V_DRM : 400 V
• I_GT: 100 µA
Preliminary Datasheet
• Non-Insulated Type
• Planar Type
R07DS1232EJ0100
Rev.1.00
Oct 14, 2014
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
4
12 ₃
2, 4
3
1
1. Cathode
2. Anode
3. Gate
4. Anode
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
V_RRM
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage ^Note1
V_RSM
V_DRM
Notes: 1. With gate to cathode resistance R_GK = 1 kΩ
Parameter
RMS on-state current
Average on-state current
Symbol
I_T(RMS)
I_T(AV)
Ratings
8
5
Surge on-state current
I²t for fusing
I_TSM
70
I²t
20
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
P_GM
P_G(AV)
V_FGM
V_RGM
I_FGM
Tj
Tstg
—
2
0.2
6
6
1
– 40 to +125
– 40 to +125
0.32
Voltage class
8
Unit
400
V
500
V
400
V
Unit
Conditions
A
A
Commercial frequency, sine half wave
180° conduction, Tc = 95°C ^Note2
A
60Hz sine half wave, 1full cycle,
peak value, non-repetitive
A²s
Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
W
W
V
V
A
°C
°C
g
Typical value
R07DS1232EJ0100 Rev.1.00
Oct 14, 2014
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