CR2PM-8UE_15 Datasheet, PDF (1/6 Pages) Renesas Technology Corp – 400V - 2A - Thyristor Low Power Use

CR2PM-8UE
400V - 2A - Thyristor
Low Power Use
Features
• I_{T (AV)} : 2 A
• V_DRM : 400 V
• I_GT: 100 µA
Preliminary Datasheet
• Planar Type
R07DS1160EJ0200
Rev.2.00
Dec 24, 2014
Outline
RENESAS Package code: PRSS0003AA-B
(Package name: TO-220F(2) )
12 ₃
2
3
1
1. Cathode
2. Anode
3. Gate
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage ^Note1
Notes: 1. With gate to cathode resistance RGK= 1 kΩ
VRRM
VRSM
VDRM
Parameter
RMS on-state current
Average on-state current
Symbol
IT(RMS)
IT(AV)
Ratings
4
2
Surge on-state current
ITSM
20
I²t for fusing
I²t
1.7
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
PGM
PG(AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
0.5
0.1
6
6
0.2
– 40 to +125
– 40 to +125
2.0
Voltage class
8
Unit
400
V
500
V
400
V
Unit
Conditions
A
A
Commercial frequency, sine half wave
180° conduction, Tc = 98°C
A
60Hz sine half wave, 1full cycle,
peak value, non-repetitive
A²s
Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
W
W
V
V
A
°C
°C
g
Typical value
R07DS1160EJ0200 Rev.2.00
Dec 24, 2014
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