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CR08AS-12_10 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Thyristor Low Power Use
CR08AS-12
Thyristor
Low Power Use
Features
 IT (AV) : 0.8 A
 VDRM : 600 V
 IGT : 100 A
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK)
3
2
1
4
Preliminary Datasheet
R07DS0133EJ0500
(Previous: REJ03G0349-0400)
Rev.5.00
Sep 10, 2010
 Non-Insulated Type
 Glass Passivation Type
 Surface Mounted type
RENESAS Package code: PLZZ0004CB-A
(Package name: SOT-89)
KG 4
LP1
O2
E3
3
2, 4
1
1. Cathode
2. Anode
3. Gate
4. Anode
Applications
Solid state relay, strobe flasher, igniter, and hybrid IC
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
1.26
0.8
Surge on-state current
I2t for fusing
ITSM
10
I2t
0.42
Peak gate power dissipation
PGM
0.5
Average gate power dissipation
PG (AV)
0.1
Peak gate forward voltage
VFGM
6
Peak gate reverse voltage
VRGM
6
Peak gate forward current
IFGM
0.3
Junction temperature
Tj
– 40 to +125
Storage temperature
Tstg
– 40 to +125
Mass
—
50
Notes: 1. With gate to cathode resistance RGK = 1 k.
Voltage class
Unit
12 (Mark AF)
600
V
720
V
480
V
600
V
480
V
Unit
Conditions
A
A
Commercial frequency, sine half wave
180° conduction, Ta = 51°CNote2
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
V
A
°C
°C
mg Typical value
R07DS0133EJ0500 Rev.5.00
Sep 10, 2010
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