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| CR08AS-12A_13 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 600V - 0.8A - Thyristor Low Power Use | |||
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CR08AS-12A
600V - 0.8A - Thyristor
Low Power Use
Features
⢠IT (AV) : 0.8 A
⢠VDRM : 600 V
⢠IGT: 100 μA
Outline
Preliminary Datasheet
R07DS0489EJ0300
Rev.3.00
May 22, 2013
⢠Non-Insulated Type
⢠Planar Type
⢠Surface Mounted type
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK)
3
2
1
4
2, 4
3
1
1. Cathode
2. Anode
3. Gate
4. Anode
Applications
Solid state relay, strobe flasher, igniter, and hybrid IC
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage Note1
DC off-state voltage Note1
Parameter
RMS on-state current
Average on-state current
Symbol
IT(RMS)
IT(AV)
Symbol
VRRM
VRSM
VR(DC)
VDRM
VD(DC)
Ratings
1.26
0.8
Surge on-state current
I2t for fusing
ITSM
10
I2t
0.42
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
PGM
PG(AV)
VFGM
VRGM
IFGM
Tj
0.5
0.1
6
6
0.3
â 40 to +125
Storage temperature
Tstg
â 40 to +125
Mass
â
50
Notes: 1. With gate to cathode resistance RGK = 1 kΩ
Voltage class
Unit
12
600
V
720
V
480
V
600
V
480
V
Unit
Conditions
A
A
Commercial frequency, sine half wave
180° conduction, Ta=51°C Note2
A
60Hz sine half wave, 1full cycle,
peak value, non-repetitive
A2s
Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
W
W
V
V
A
°C
°C
mg Typical value
R07DS0489EJ0300 Rev.3.00
May 22, 2013
Page 1 of 7
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