CR05BM-12A_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 600V - 0.5A - Thyristor Low Power Use

CR05BM-12A
600V - 0.5A - Thyristor
Low Power Use
Preliminary Datasheet
R07DS0992EJ0100
Rev.1.00
Dec 20, 2012
Features
 I_{T (AV)} : 0.5 A
 V_DRM : 600 V
Outline
 I_GT : 100 A
 Planar Type
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92*)
1
32
1
2
3
1. Anode
2. Gate
3. Cathode
Applications
Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control application
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
V_RRM
Non-repetitive peak reverse voltage
V_RSM
DC reverse voltage
Repetitive peak off-state voltage ^Note1
DC off-state voltage ^Note1
V_R(DC)
V_DRM
V_D(DC)
Notes: 1. With gate to cathode resistance R_GK = 1 k.
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
Parameter
RMS on-state current
Average on-state current
Symbol
I_{T (RMS)}
I_{T (AV)}
Surge on-state current
I²t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
I_TSM
I²t
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_FGM
Tj
Tstg
—
Ratings
0.63
0.4
0.5
8
0.32
0.5
0.1
6
6
0.3
–40 to +125
–40 to +125
0.23
Unit
Conditions
A
A
Commercial frequency, sine half
wave 180 conduction, Ta = 54C
A
Commercial frequency, sine half
wave 180 conduction, Ta = 30C
A
50 Hz sine half wave 1 full cycle,
peak value, non-repetitive
A²s
Value corresponding to 1 cycle of half
wave 50 Hz, surge on-state current
W
W
V
V
A
C
C
g
Typical value
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
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