CR05AS-8_10 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Thyristor Low Power Use

CR05AS-8
Thyristor
Low Power Use
Features
 I_{T (AV)} : 0.5 A
 V_DRM : 400 V
 I_GT : 100 A
Outline
Preliminary Datasheet
R07DS0135EJ0500
(Previous: REJ03G0348-0400)
Rev.5.00
Sep 15, 2010
 Non-Insulated Type
 Planar Passivation Type
 Surface Mounted type
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK)
3
2
1
4
RENESAS Package code: PLZZ0004CB-A
G ^{(Package name: SOT-89)}
PK ₄
L₁
EO ²
3
2, 4
3
1
1. Cathode
2. Anode
3. Gate
4. Anode
Applications
Solid state relay, strobe flasher, igniter, and hybrid IC
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage^Note1
DC off-state voltage^Note1
Symbol
V_RRM
V_RSM
V_{R (DC)}
V_DRM
V_{D (DC)}
Parameter
RMS on-state current
Average on-state current
Symbol
I_{T (RMS)}
I_{T (AV)}
Ratings
0.79
0.5
Surge on-state current
I²t for fusing
I_TSM
10
I²t
0.4
Peak gate power dissipation
P_GM
0.1
Average gate power dissipation
P_{G (AV)}
0.01
Peak gate forward voltage
V_FGM
6
Peak gate reverse voltage
V_RGM
6
Peak gate forward current
I_FGM
0.1
Junction temperature
Tj
– 40 to +125
Storage temperature
Tstg
– 40 to +125
Mass
—
50
Notes: 1. With gate to cathode resistance R_GK = 1 k.
Voltage class
Unit
8 (Mark CD)
400
V
500
V
320
V
400
V
320
V
Unit
Conditions
A
A
Commercial frequency, sine half wave
180° conduction, Ta = 57°C^Note2
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
A²s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
V
A
°C
°C
mg Typical value
R07DS0135EJ0500 Rev.5.00
Sep 15, 2010
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