BCR1AM-14A Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 700V-1A-Triac Low Power Use

BCR1AM-14A
700V-1A-Triac
Low Power Use
Features
• I_{T (RMS)} : 1 A
• V_DRM :700 V
• I_FGTI : 5 mA
• I_RGTI, I_RGTIII : 5 mA or 3mA(I_GT:item1)
• I_{FGT III} : 10 mA
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92*)
13 ₂
Preliminary Datasheet
• Planar Type
R07DS1076EJ0100
Rev.1.00
May 30, 2013
2
3
1
1. T₁ Terminal
2. T₂ Terminal
3. Gate Terminal
Maximum Ratings
Parameter
Repetitive peak off-state voltage^Note1
Non- repetitive peak off-state voltage^Note1
Notes: 1. Gate open.
Symbol
V_DRM
V_DSM
Parameter
RMS on-state current
Symbol
I_{T (RMS)}
Ratings
1.0
Surge on-state current
I²t for fusing
I_TSM
10
I²t
0.41
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
P_GM
P_{G (AV)}
V_GM
I_GM
Tj
Tstg
—
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.23
Voltage class
Unit
14
700
V
840
V
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction, , Tc= 56°C^Note3
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A²s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
°C
°C
g
Typical value
R07DS1076EJ0100 Rev.1.00
May 30, 2013
Page 1 of 3