BB501C Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501C
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
REJ03G0830-0600
(Previous ADE-208-701D)
Rev.6.00
Aug.10.2005
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
PG = 21.5 dB typ. at f = 900 MHz
• Low noise;
NF = 1.85 dB typ. at f = 900 MHz
• Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
Notes:
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
1. Marking is “AS –”.
2. BB501C is individual type number of RENESAS BBFET.
1. Source
2. Gate1
3. Gate2
4. Drain
Rev.6.00 Aug 10, 2005 page 1 of 9