2SK975_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET

Preliminary Datasheet
2SK975
Silicon N Channel MOS FET
R07DS0434EJ0300
(Previous: REJ03G0905-0200)
Rev.3.00
Jun 07, 2011
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
⎯ Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
G
1. Source
2. Drain
3. Gate
321
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Symbol
V_DSS
V_GSS
I_D
I_D(pulse)*1
I_DR
Pch
Tch
Tstg
Ratings
60
±20
1.5
4.5
1.5
900
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
R07DS0434EJ0300 Rev.3.00
Jun 07, 2011
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