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| 2SK4150_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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2SK4150
Silicon N Channel MOS FET
High Speed Power Switching
Features
ï· Capable of 2.5 V gate drive
ï· Low drive current
ï· Low on-resistance
RDS(on) = 4.0 ï typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C)
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92(1))
G
321
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
Pch
ï±ch-a
Tch
Tstg
Preliminary Datasheet
REJ03G1909-0300
Rev.3.00
May 27, 2010
D
1. Source
2. Drain
3. Gate
S
Ratings
250
±10
0.4
1.6
0.4
1.6
0.75
166.7
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
ï°C/W
ï°C
ï°C
REJ03G1909-0300 Rev.3.00
May 27, 2010
Page 1 of 6
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