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| 2SK4146 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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2SK4146
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0130EJ0100
Rev.1.00
Sep 24, 2010
Description
The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Low on-state resistance
⯠RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)
⢠Low input capacitance
⯠Ciss = 3500 pF TYP. (VDS = 10 V)
Ordering Information
Part No.
LEAD PLATING
PACKING
2SK4146-S19-AY â1
Pure Sn (Tin)
50 pcs/tube
Note: â1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-220, S19 tube
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V) VDSS
75
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
ID(DC)
ID(pulse)
±80
±200
Total Power Dissipation (TC = 25°C) PT1
84
Total Power Dissipation (TA = 25°C) PT2
1.5
Channel Temperature
Tch
150
Storage Temperature
Tstg
â55 to +150
Repetitive Avalanche Current â2
IAR
33
Repetitive Avalanche Energy â2
EAR
109
Notes: â1. PW ⤠10 μs, Duty Cycle ⤠1%
â2. Starting Tch = 25°C, VDD = 38 V, RG = 25 Ω, VGS = 20 â 0 V, L = 100 μH
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.49
83.3
°C/W
°C/W
R07DS0130EJ0100 Rev.1.00
Sep 24, 2010
Page 1 of 6
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