2SK4093 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

2SK4093
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Capable of 2.5V gate drive
• Low drive current
• Low on-resistance
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
G
321
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 30%
2. PW ≤ 10 µs, duty cycle ≤ 1%
Symbol
V_DSS
V_GSS
I_D ^Note1
I_D
Note2
(pulse)
I_DR
I_DR
Note2
(pulse)
Pch
θ_ch-a
Tch
Tstg
REJ03G1534-0300
Rev.3.00
Feb 01, 2008
D
1. Source
2. Drain
3. Gate
S
Ratings
250
±10
1
2
0.5
2
0.9
139
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
REJ03G1534-0300 Rev.3.00 Feb 01, 2008
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