2SK3736 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

2SK3736
Silicon N Channel MOS FET
Power Switching
Features
• Capable of 2.5 V gate drive
• Low drive current
• Low on-resistance
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
G
123
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
Pch^Note2
Tch
Tstg
REJ03G0525-0200
Rev.2.00
Jul 27, 2006
D
1. Gate
2. Drain
(Flange)
3. Source
S
Ratings
250
±10
6
24
6
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.2.00 Jul 27, 2006 page 1 of 6