2SK3419 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

2SK3419
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_{DS (on)} = 4.3 mΩ typ.
• 4 V gate drive device
• High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1
2
3
G
S
REJ03G1099-0200
(Previous: ADE-208-942)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 7