2SK3418 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – 2SK3418

2SK3418
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 4.3 mΩ typ.
• Capable of 4 V gate drive
• High speed switching
Outline
TO-220AB
D
G
S
1
2
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
V_DSS
V_GSS
I_D
I_D (pulse)^Note1
I_DR
I_APNote3
E_ARNote3
Pch^Note2
Tch
Tstg
REJ03G0407-0200
(Previous ADE-208-941 (Z))
Rev.2.00
Sep.10.2004
1. Gate
2. Drain
(Flange)
3. Source
Ratings
60
±20
85
340
85
60
308
110
150
– 55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.2.00 Sep. 10, 2004 page 1 of 7