2SK3391_07 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET UHF Power Amplifier

2SK3391
Silicon N-Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz)
• Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK ^R )
3
1
2
3
1
4
REJ03G0209-0300
Rev.3.00
Nov 08, 2007
1. Gate
2. Source
3. Drain
4. Source
Note: Marking is “JX”.
2, 4
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW < 1sec, Tch < 150°C
2. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
Pch ^Note2
Tch
Tstg
Ratings
17
±10
0.3
0.75
5
150
–45 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G0209-0300 Rev.3.00 Nov 08, 2007
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