2SK3378 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Switching

2SK3378
Silicon N Channel MOS FET
High Speed Switching
Features
• Low on-resistance
R_DS = 2.7 Ω typ. (V_GS = 10 V, I_D = 50 mA)
R_DS = 4.7 Ω typ. (V_GS = 4 V, I_D = 20 mA)
• 4 V gate drive device.
• Small package (CMPAK)
Outline
RENESAS Package code: PTSP0003ZA-A
(Package name: CMPAK ^R )
3
1
G
2
Note: Marking is EN
*CMPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Rating
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
Pch ^{Note 2}
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
REJ03G1599-0200
(Previous: ADE-208-805)
Rev.2.00
Oct 23, 2007
D
1. Source
2. Gate
3. Drain
S
Ratings
30
±20
100
400
100
300
150
–55 to +150
(Ta = 25°C)
Unit
V
V
mA
mA
mA
mW
°C
°C
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
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