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2SK3229 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
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2SK3229
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS (on) = 6 m⦠typ.
⢠Low drive current
⢠4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220Câ¢FM)
123
D
G
S
REJ03G1095-0200
(Previous: ADE-208-766)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 3
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