2SK3210 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3210(L), 2SK3210(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS = 40 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
D
4
4
G
S
1
2
3
1
2
3
REJ03G0414-0300
(Previous ADE-208-760A (Z))
Rev.3.00
Sep. 30, 2004
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10ms, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
V_DSS
V_GSS
I_D
I_D (pulse)^Note1
I_DR
I_APNote3
E_ARNote3
Pch^Note2
Tch
Tstg
Ratings
150
±20
30
120
30
30
67
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.3.00 Sep. 30, 2004 page 1 of 8