2SK3209 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3209
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS = 40 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1090-0300
(Previous: ADE-208-759A)
Target Specification
Rev.3.00
Sep 07, 2005
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
1. Gate
2. Drain
3. Source
12 ₃
S
Rev.3.00 Sep 07, 2005 page 1 of 3