2SK3163 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3163
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
REJ03G1088-0300
(Previous: ADE-208-736A)
Rev.3.00
Sep 07, 2005
D
G
S
1. Gate
2. Drain
(Flange)
3. Source
Rev.3.00 Sep 07, 2005 page 1 of 7