2SK3159_16 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 150V - 50A - MOS FET High Speed Power Switching

2SK3159
150V - 50A - MOS FET
High Speed Power Switching
Features
 Low on-resistance
R_{DS (on)} = 23 m typ.
 High speed switching
 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1
2
3
S
Data Sheet
R07DS1357EJ0500
Rev.5.00
Aug 02, 2016
1. Gate
2. Drain
(Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW  10s, duty cycle  1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg  50 
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP ^Note3
EAR ^Note3
Pch ^Note2
Tch
Tstg
Ratings
150
20
50
200
50
50
187
125
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS1357EJ0500 Rev.5.00
Aug 02, 2016
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