2SK3159 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3159
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS = 23 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1
2
3
S
REJ03G1084-0400
Rev.4.00
May 15, 2006
1. Gate
2. Drain
(Flange)
3. Source
Rev.4.00 May 15, 2006 page 1 of 7