2SK3156 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3156
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS =50 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
G
123
REJ03G1081-0301
(Previous: ADE-208-683A)
Rev.3.01
Apr 27, 2006
D
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.3.01 Apr 27, 2006 page 1 of 7