2SK3151 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3151
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_{DS (on)} = 11.5 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
REJ03G1076-0400
(Previous: ADE-208-747B)
Rev.4.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
G
2. Drain
(Flange)
3. Source
1
2
S
3
Rev.4.00 Sep 07, 2005 page 1 of 7