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2SK3142 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching
2SK3142
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 4 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
G
12 3
REJ03G1071-0300
(Previous: ADE-208-681A)
Rev.3.00
Sep 07, 2005
D
1. Gate
2. Drain
3. Source
S
Rev.3.00 Sep 07, 2005 page 1 of 7