2SK3140 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3140
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1069-0500
(Previous: ADE-208-767C)
Rev.5.00
Sep 07, 2005
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
D
1. Gate
2. Drain
G
3. Source
12 ₃
S
Rev.5.00 Sep 07, 2005 page 1 of 7