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2SK3107C Datasheet, PDF (1/8 Pages) Renesas Technology Corp – N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
2SK3107C
N-CHANNEL MOSFET FOR SWITCHING
R07DS1286EJ0200
Rev.2.00
Jul 16, 2015
Description
The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
 Directly driven by a 4.5 V power source.
 Low on-state resistance
RDS(on)1 = 2.7  MAX. (VGS = 10 V, ID = 100 mA)
RDS(on)2 = 3.2  MAX. (VGS = 4.5 V, ID = 50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK3107C-T1-A/AT
-A:Sn-Bi , -AT:Pure Sn
3000p/Reel
SC-75 (3pUSM)
Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XP
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
20
V
Drain Current (DC)
ID(DC)
200
mA
Drain Current (pulse) Note1
ID(pulse)
800
mA
Total Power Dissipation Note2
PT
200
mW
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
55 to 150
C
Note 1. PW  10 s, Duty Cycle  1%
Note 2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
R07DS1286EJ0200 Rev.2.00
Jul 16, 2015
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