2SK3082 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

2SK3082(L), 2SK3082(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.055 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1065-0300
(Previous: ADE-208-637A)
Rev.3.00
Sep 07, 2005
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
D
4
G
12
3
123
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.3.00 Sep 07, 2005 page 1 of 8