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2SK3070 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching
2SK3070(L), 2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) =4.5 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1063-0900
(Previous: ADE-208-684G)
Rev.9.00
Sep 07, 2005
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
4
1
23
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.9.00 Sep 07, 2005 page 1 of 8